Large Lateral Photovoltaic Effect in Metal-(Oxide-) Semiconductor Structures

Magnetic state dependent transient lateral photovoltaic effect in patterned ferromagnetic metal-oxide-semiconductor films

Nonvolatile and tunable switching of lateral photo-voltage triggered by laser and electric pulse in metal dusted metal-oxide-semiconductor structures

Owing to the innate stabilization of built-in potential in p-n junction or metal-oxide-semiconductor structure, the sensitivity and linearity of most lateral photovoltaic effect (LPE) devices is always fixed after fabrication. Here we report a nonvolatile and tunable switching effect of lateral photo-voltage (LPV) in Cu dusted ultrathin metal-oxide-semiconductor structure. With the stimulation ...

Lateral photovoltaic effect in flexible free-standing reduced graphene oxide film for self-powered position-sensitive detection

Lightweight, simple and flexible self-powered photodetectors are urgently required for the development and application of advanced optical systems for the future of wearable electronic technology. Here, using a low-temperature reduction process, we report a chemical approach for producing freestanding monolithic reduced graphene oxide papers with different gradients of the carbon/oxygen concent...

Localized surface plasmon resonances dominated giant lateral photovoltaic effect observed in ZnO/Ag/Si nanostructure

We report substantially enlarged lateral photovoltaic effect (LPE) in the ZnO/Ag/Si nanostructures. The maximum LPE sensitivity (55.05 mv/mm) obtained in this structure is about seven times larger than that observed in the control sample (7.88 mv/mm) of ZnO/Si. We attribute this phenomenon to the strong localized surface plasmon resonances (LSPRs) induced by nano Ag semicontinuous films. Quite ...

Vacuum gate dielectric gate-all-around nanowire for hot carrier injection and bias temperature instability free transistor

Articles you may be interested in Improved carrier injection in gate-all-around Schottky barrier silicon nanowire field-effect transistors Appl. Mechanism and lifetime prediction method for hot-carrier-induced degradation in lateral diffused metal-oxide-semiconductor transistors Appl. Effects of gate bias on hot-carrier reliability in drain extended metal-oxide-semiconductor transistors Appl. D...